MRF9120R3 - 26 V LATERAL N-CHANNEL RF POWER MOSFETs

Long Ferrite Beads, Surface Mount Short Ferrite Beads, Surface Mount 68 pF Chip Capacitors, B Case 0.8 - 8.0 pF Variable Capacitors 7.5 pF Chip Capacitor, B Case 3.3 pF Chip Capacitor, B Case 11 pF Chip Capacitors, B Case 51 pF Chip Capacitors, B Case 6.2 pF Chip Capacitors, B Case 4.7 pF Chip Capac

• UT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 18 60 Gps 50 40 30 20 η 8 6 VDD = 26 Vdc IDQ = 2 x 500 mA f = 880 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 100 10 0 1 h, DRAIN.