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MRF9210R3 - RF Power Field Effect Transistor

General Description

11 Ω RF Beads, Surface Mount (0805) 0.8 - 1 GHz Xinger Balun 27 pF Chip Capacitor, B Case 12 pF Chip Capacitor (0603) 3.3 pF Chip Capacitors (0603) 9.1 pF Chip Capacitor, R Case 4.3 pF Chip Capacitor, B Case 0.4 - 2.5 pF Variable Capacitor 12 pF Chip Capacitor, B Case 470 µF, 63 V Electrolytic Capac

Key Features

  • 2.5.
  • ALT @ 30 kHz BW +ALT @ 30 kHz BW.
  • 2.0.
  • 1.5.
  • 1.0.
  • 0.5 0 0.5 1.0 1.5 2.0 2.5 f,.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. www.DataSheet4U.com Order this document by MRF9210/D The RF MOSFET Line RF Power Field Effect Transistor Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 40 Watts Power Gain — 16.5 dB Efficiency — 25.5% Adjacent Channel Power — 750 kHz: - 46.2 dBc @ 30 kHz BW 1.