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MRF927T1 - (MRF927T1 / MRF927T3) LOW NOISE HIGH FREQUENCY TRANSISTOR

Key Features

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF927T1/D The RF Small Signal Line NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors Designed for use in low voltage, low current applications at frequencies to 2.0 GHz. Specifically aimed at portable communication devices such as pagers and hand–held phones. • High Gain (GUmax 15 dB Typ @ 1.0 GHz) @ 1.0 mA • Small, Surface–Mount Package (SC–70) • High Current Gain–Bandwidth Product at Low Current, Low Voltage (fτ = 8.0 GHz Typ @ 3.0 V, 5.0 mA) • Available in Tape and Reel by Adding T1 or T3 Suffix to Part Number. T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel. T3 Suffix = 10,000 Units per 8 mm, 7 inch Reel.