| Part number | MTB8N50E |
|---|---|
| Datasheet | MTB8N50E_Motorola.pdf |
| File Size | 162.71 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB8N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB8N50E TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM N Channel Enhancement Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
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