MTD1N50E Datasheet Tmos Power Fet

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD1N50E/D Designer's TMOS E-FET .

Datasheet Details

Part number	MTD1N50E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	215.60 KB
Description	TMOS POWER FET
Datasheet	MTD1N50E_Motorola.pdf

Key Features

ance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain an.

MTD1N50E Distributor & Price

Compare MTD1N50E distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number	Description
MTD1N40	POWER FIELD EFFECT TRANSISTOR
MTD1N60E	TMOS POWER FET
MTD1N80E	TMOS POWER FET
MTD10N05E	TMOS4 POWER FET
MTD12N06EZL	High Energy Power FET DPAK
MTD1302	TMOS POWER FET
MTD15N06V	TMOS POWER FET
MTD15N06VL	TMOS POWER FET
MTD1P50E	TMOS POWER FET
MTD20N03HDL	TMOS POWER FET