Datasheet4U Logo Datasheet4U.com

MTD2955E - TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

Key Features

  • ectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MTD2955E Power Field Effect Transistor DPAK ON Semiconductor
MTD2955V Power MOSFET ON Semiconductor
MTD2955V P-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor
MTD2001 Stepping Motor Driver ICs Shindengen Electric
MTD2001M Photo Diode Marktech Corporate

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTD2955V Power Field Effect Transistor
MTD20N03HDL TMOS POWER FET
MTD20N06HD TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
MTD20N06HDL Power MOSFET
MTD20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.