| Part number | MTD2955E |
|---|---|
| Datasheet | MTD2955E_Motorola.pdf |
| File Size | 243.70 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MTD2955E | Power Field Effect Transistor DPAK | ON Semiconductor |
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MTD2955V | Power MOSFET | ON Semiconductor |
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MTD2955V | P-Channel Enhancement Mode Field Effect Transistor | Fairchild Semiconductor |
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTD2955V | Power Field Effect Transistor |
| MTD20N03HDL | TMOS POWER FET |
| MTD20N06HD | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM |
| MTD20N06HDL | Power MOSFET |
| MTD20N06V | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20P03HDL | TMOS POWER FET |
| MTD20P06HDL | TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
| MTD2N40E | TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
| MTD2N50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
| MTD10N05E | TMOS4 POWER FET |
