MTD2955E Datasheet Tmos Power Fet 12 Amperes 60 Volts Rds(on) = 0.3 Ohm

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955E/D ™ Data Sheet TMOS E-FET.

Datasheet Details

Part number	MTD2955E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	243.70 KB
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM
Datasheet	MTD2955E_Motorola.pdf

Key Features

ectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common.

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