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MTD2955V - P-Channel Enhancement Mode Field Effect Transistor

General Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.

Key Features

  • • • • • -12 A, -60 V. RDS(ON) = 0.23 Ω @ VGS = -10 V Low gate charge. Fast switching speed. High performance technology for low RDS(ON). 6.
  • 6 72 '.
  • ' R $.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTD2955V August 1999 DISTRIBUTION GROUP* MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • • • • -12 A, -60 V. RDS(ON) = 0.23 Ω @ VGS = -10 V Low gate charge. Fast switching speed. High performance technology for low RDS(ON).