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MTD2955V Datasheet Power Field Effect Transistor

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and mutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Key Features

  • of TMOS V.
  • On.
  • resistance Area Product about One.
  • half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
  • Faster Switching than E.
  • FET Predecessors ™ Data Sheet V™ MTD2955V TMOS POWER FET 12.

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More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTD2955E TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM
MTD20N03HDL TMOS POWER FET
MTD20N06HD TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
MTD20N06HDL Power MOSFET
MTD20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MTD20P03HDL TMOS POWER FET
MTD20P06HDL TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
MTD2N40E TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM
MTD2N50E TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
MTD10N05E TMOS4 POWER FET

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