MTD2955V Overview
MTD2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin...
MTD2955V Key Features
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Pb-Free Packages are Available
- Continuous
- Non-repetitive (tp ≤ 10 ms)
- Continuous Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 ms)
- 55 to 175
- Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 W)
