MTP12N06EZL Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12N06EZL/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's N- Channel Enhancement- Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a gate- to- source zener diode designed for 4 kV ESD protection (human body model). - - - - - ESD Protected 4 kV Human Body Model 400 V Machine Model Avalanche Energy Capability Internal Source- To- Drain Diode Designed to Replace External Zener Transient Suppressor- Absorbs High Energy in the Avalanche Mode TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) =...