MTP12N10E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP12N10E |
|---|---|
| Datasheet | MTP12N10E_Motorola.pdf |
| File Size | 239.73 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP12N10E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time. Designed...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP12N05E | POWER FIELD EFFECT TRANSISTOR |
| MTP12N06EZL | TMOS POWER FET |
| MTP12P06 | (MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR |
| MTP12P10 | TMOS POWER FET |
| MTP10N05 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
| MTP10N06 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
| MTP10N10E | TMOS POWER FETs |
| MTP10N10EL | TMOS POWER FET |
| MTP10N15 | POWER FIELD EFFECT TRANSISTOR |
| MTP10N25 | POWER FIELD EFFECT TRANSISTOR |
