MTP1306 Datasheet PDF

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 Ω) Thermal Resistance — Junction–to–Case — Junction–to–Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5.0 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS 280 RθJC RθJA TL 0.8 62.5 260 °C/W °C Value 30 30 ± 20 ± 20 75 59 225 150 1.2 – 55 to 150 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ This document contains information on a new product. Specifications and information herein are subject to change without notice. E–FET and HDTMOS are trademarks of Motorola, Inc. Motorola TMOS © Motorola, Inc.