MTP1306 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP1306 |
|---|---|
| Datasheet | MTP1306_Motorola.pdf |
| File Size | 171.45 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1306/D Advance Information HDTMOS E-FET.™ High Density Power FET N Channel Enhancement Mode Silicon Gate This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP1302 | TMOS POWER FET |
| MTP10N05 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
| MTP10N06 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs |
| MTP10N10E | TMOS POWER FETs |
| MTP10N10EL | TMOS POWER FET |
| MTP10N15 | POWER FIELD EFFECT TRANSISTOR |
| MTP10N25 | POWER FIELD EFFECT TRANSISTOR |
| MTP10N40E | TMOS POWER FET |
| MTP12N05E | POWER FIELD EFFECT TRANSISTOR |
| MTP12N06EZL | TMOS POWER FET |
