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MTP50N06EL - N-Channel Power FET

Features

  • erated into an inductive load; however, snubbing reduces switching losses. TJ = 25°C Ciss Coss GATE.
  • TO.
  • SOURCE OR DRAIN.
  • TO.
  • SOURCE.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06EL/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP50N06EL Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
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