MTP50N06EL datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTP50N06EL |
|---|---|
| Datasheet | MTP50N06EL_Motorola.pdf |
| File Size | 232.48 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | N-Channel Power FET |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06EL/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP50N06EL Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This advanced TMOS E FET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain to source diode with a fast recovery time....
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTP50N06V | N-Channel Power FET |
| MTP50N06VL | N-Channel Power FET |
| MTP50N05E | N-Channel Power FET |
| MTP50P03HDL | TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM |
| MTP52N06V | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM |
| MTP52N06VL | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM |
| MTP55N06Z | TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm |
| MTP5N20 | POWER FIELD EFFECT TRANSISTOR |
| MTP5N40E | TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM |
| MTP5P06V | TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM |
