MTP50N06VL
Features of TMOS V
- On- resistance Area Product about One- half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology
- Faster Switching than E- FET Predecessors Features mon to TMOS V and TMOS E- FETS
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E- FET MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain- to- Source Voltage Drain- to- Gate Voltage (RGS = 1.0 MΩ) Gate- to- Source Voltage
- Continuous Gate- Source Voltage
- Non- repetitive (tp ≤ 10 ms) Drain Current
- Continuous @ 25°C
- Continuous @ 100°C
- Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy
- STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 5 Vdc, PEAK IL = 42 Apk, L = 0.3 m H, RG = 25 Ω) Thermal Resistance
- Junction to Case
- Junction to Ambient
G S CASE 221A- 06, Style 5 TO- 220AB
Symbol VDSS VDGR VGS VGSM ID...
