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MTP50N06V Datasheet N-Channel Power FET

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

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Overview

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs.

This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices.

Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.

Key Features

  • of TMOS V.
  • On.
  • resistance Area Product about One.
  • half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
  • Faster Switching than E.
  • FET Predecessors Features Common to TMOS V and TMOS E.
  • FETS.
  • Avalanche Energy Specified.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • Static Parameters are the Same for both TMOS V and TMOS E.
  • FET G S CASE 221A.
  • 06, Style 5 TO.
  • 220AB.

More Datasheets from Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MTP50N06VL N-Channel Power FET
MTP50N06EL N-Channel Power FET
MTP50N05E N-Channel Power FET
MTP50P03HDL TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM
MTP52N06V TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM
MTP52N06VL TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM
MTP55N06Z TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
MTP5N20 POWER FIELD EFFECT TRANSISTOR
MTP5N40E TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM
MTP5P06V TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM