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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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HDTMOS E-FET ™ High Density Power FET N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs www.DataSheet4U.com where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
MTP75N03HDL Datasheet
