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MTP75N05HD - TMOS POWER FET

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Features

  • n the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 8000 VDS = 0 7000 C,.

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Datasheet Details

Part number MTP75N05HD
Manufacturer Motorola
File Size 178.54 KB
Description TMOS POWER FET
Datasheet download datasheet MTP75N05HD Datasheet
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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP75N05HD/D Designer's ™ HDTMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy–efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs www.DataSheet4U.com where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
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