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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PZTA96T1/D
High Voltage Transistor
PNP Silicon
COLLECTOR 2,4
PZTA96T1
Motorola Preferred Device
MAXIMUM RATINGS
BASE 1
EMITTER 3
SOT–223 PACKAGE PNP SILICON
HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
Rating
Symbol
Value
Unit
Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation up to TA = 25°C(1) Storage Temperature Range Junction Temperature DEVICE MARKING
VCEO VCBO VEBO
IC PD Tstg TJ
– 450 – 450 – 5.0 – 500 1.5 – 65 to +150 150
Vdc Vdc Vdc mAdc Watts °C °C
4
1 2 3
CASE 318E–04, STYLE 1 TO–261AA
ZTA96
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction to Ambient(1)
Symbol RθJA
Max 83.
PZTA96T1 Datasheet
