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PZTA96ST1
Preferred Device
High Voltage Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation Up to TA = 25°C (Note 1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value –450 –450 –5.0 –500 1.5 –65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts °C °C
4
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COLLECTOR 2,4 BASE 1 EMITTER 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction to Ambient (Note 1) Symbol RqJA Max 83.3 Unit °C
1 2 3
AWW ZTA96
ELECTRICAL CHARACTERISTICS (Note 2)
Characteristic Symbol Min Max Unit
SOT–223, TO–261AA CASE 318E STYLE 1
A WW
= Location = Work Week
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.
PZTA96ST1 Datasheet
