PZTA96S Datasheet PDF

FEATURES

PNP Silicon +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation Up to TA = 25 Storage Temperature Range Junction Temperature Thermal Resistance from Junction to Ambient * * Symbol VCEO VCBO VEBO IC PD Tstg TJ RèJA Rating -450 -450 -5 -500 1.5 -65 to +150 150 83.3 Unit V V V mA Watts * Device mounted on a glass epoxy printed circuit board 1.575 in. X 1.575 in.X 0.059 in.;

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector–Emitter Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector–Base Cutoff Current Emitter–Base Cutoff Current DC Current Gain* Saturation Voltages * Pulse Test: Pulse Width Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) 300 ìs; Duty Cycle = 2.0%. Testconditons IC = -1.0 mA, IB = 0 IC =...