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PZTA96S - High Voltage Transistor

Key Features

  • PNP Silicon +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector.
  • Emitter Voltage Collector.
  • Base Voltage Emitter.
  • Base Voltage Collector Current Total Power Dissipation Up to TA = 25 Storage Temperature Range Junction Temperature Thermal Resistance from Junction to Ambient.
  • Symbol VCEO VCBO VEBO IC PD Tstg TJ RèJA Rating -450 -450 -5 -500 1.5 -65.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type High Voltage Transistor PZTA96S SOT-223 6.50 +0.2 -0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features PNP Silicon +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current Total Power Dissipation Up to TA = 25 Storage Temperature Range Junction Temperature Thermal Resistance from Junction to Ambient * * Symbol VCEO VCBO VEBO IC PD Tstg TJ RèJA Rating -450 -450 -5 -500 1.5 -65 to +150 150 83.3 Unit V V V mA Watts * Device mounted on a glass epoxy printed circuit board 1.575 in. X 1.575 in.X 0.059 in.