BS170
BS170 is N-channel MOSFET manufactured by Motorola Semiconductor.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS170/D
TMOS FET Switching
N- Channel
- Enhancement
1 DRAIN
2 GATE 3 SOURCE
®
MAXIMUM RATINGS
Rating Drain
- Source Voltage Gate- Source Voltage
- Continuous
- Non- repetitive (tp ≤ 50 µs) Drain Current(1) Total Device Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg Value 60 ± 20 ± 40 0.5 350
Unit Vdc Vdc Vpk Adc mW °C
CASE 29- 04, STYLE 30 TO- 92 (TO- 226AA)
- 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain- Source...
