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BZV5530 - Zener Diode

Download the BZV5530 datasheet PDF. This datasheet also covers the BZV55C10 variant, as both devices belong to the same zener diode family and are provided as variant models within a single manufacturer datasheet.

Description

Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange = 50ºC Up to Ta = 50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t = 100µs, Tj = 150ºC Storage Temperature Junc

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BZV55C10-Multicomp.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BZV5530
Manufacturer Multicomp
File Size 278.20 KB
Description Zener Diode
Datasheet download datasheet BZV5530 Datasheet

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Other Datasheets by Multicomp

Part Number Description
BZV55C10 Zener Diode
BZV55C11 Zener Diode
BZV55C12 Zener Diode
BZV55C13 Zener Diode
BZV55C15 Zener Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Zener Diode Silicon Planar Zener Diodes Feature: • Hermetically sealed, glass silicon diodes. Absolute Maximum Ratings (Ta=25°C) Description Average Forward Current (averaged Over any 20 ms period) Repetitive Peak Forward Current Total Power Dissipation up to Tflange = 50ºC Up to Ta = 50ºC and Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Non-Repetitive Peak Reverse Power Dissipation t = 100µs, Tj = 150ºC Storage Temperature Junction Temperature Thermal Resistance From Junction to tie-point (flanges) From Junction to Ambient when Mounted on a Ceramic Substrate of 10mm x 10mm x 0.6mm Symbol IF(av) IFRM Ptot Ptot PZSM Tstg Tj Rth (j-tp) Rth (j-a) Value 250 250 500 400 30 - 65 to +200 200 0.3 0.38 Unit mA mW W ºC K/mW Page 1 25/04/08 V1.
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