Multicomp MMST5401
PNP General Purpose Transistor
FEATURES
:● Epitaxial planar die construction.
● Complementary NPN type available (MMST5551).
● Also available in lead free version.
APPLICATIONS
:● Ideal for medium power amplification and switching. 1 Base Collector 3 PNP 2 Emitter Maximum Rating @ Ta = 25°C unless otherwise specified Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation Thermal resistance ,Junction to ambient Junction and Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA Tj,Tstg Value -160 -150 -5 -0.6 0.2 625 -55 to 150
ELECTRICAL CHARACTERISTICS
@ Ta = 25°C unless otherwise specified Parameter Symbol Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain hFE Test conditions IC = -100μA, IE = 0 IC = -1mA, IB = 0 IE = -10μ