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PNP General Purpose Transistor
Features:
• Epitaxial planar die construction. • Complementary NPN type available (MMST5551). • Also available in lead free version.
Applications:
• Ideal for medium power amplification and switching.
1 Base
Collector 3 PNP 2
Emitter
Maximum Rating @ Ta = 25°C unless otherwise specified
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation Thermal resistance ,Junction to ambient Junction and Storage Temperature
Symbol VCBO VCEO VEBO IC PC RθJA Tj,Tstg
Value -160 -150
-5 -0.6 0.