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NCE0106Z - N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE0106Z N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE0106Z

Datasheet Details

Part number	NCE0106Z
Manufacturer	NCE Power Semiconductor
File Size	334.84 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0106Z Datasheet
Additional preview pages of the NCE0106Z datasheet.

Product details

Description

The NCE0106Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation D G S Schematic diagram.

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Published: Jun 6, 2015 |