NCE0108AS - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 100V,ID =8A RDS(ON) < 28mΩ @ VGS=10V (Typ:22mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current Schematic diagram.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE0108AS
Manufacturer	NCE Power Semiconductor
File Size	419.82 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE0108AS Datasheet
Additional preview pages of the NCE0108AS datasheet.

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http://www.ncepower.com Pb Free Product NCE0108AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Feb 7, 2016 |