Datasheet Details
| Part number | NCE01H14T |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 320.64 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE01H14T Datasheet
|
|
|
General Description
The NCE01H14T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =100V,ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Typ4.5mΩ).
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability Schematic diagram.