NCE20PK0302J Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product Integrated P-Channel Enhancement Mode Power MOSFET and Schottky Diode Description The NCE20PK0302J uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. General Features MOSFET - VDS = -20V,ID = -3A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 170mΩ @ VGS=-1.8V Schematic diagram Schottky Diode - VKA(V) = 20V, IF = 2A, VF<0.45V@0.5A Marking and pin assignment Application - Bidirectional blocking switch - DC-DC conversion applications DFNWB2X2-6L Bottom View Package Marking and Ordering Information Device Marking Device Device Package DFNWB2X2-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000...