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NCE20P09S - P-Channel Enhancement Mode Power MOSFET

Description

The NCE20P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number NCE20P09S
Manufacturer NCE Power Semiconductor
File Size 392.33 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE20P09S Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE20P09S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 G1 G2 D2 S1 S2 Schematic diagram General Features ● VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.
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