NCE20P85G Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P85G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-20V,ID =-85A RDS(ON) < 2.5mΩ @ VGS=-4.5V RDS(ON) < 4mΩ @ VGS=-2.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Schematic diagram Pin Assignment DDDD DDDD Application - Load switch - Battery protection Package Marking and Ordering Information Device Marking Device Device Package DFN 5x6 -8L SSSG Top View GSSS Bottom View Reel Size - Tape width -...