NCE20P70G Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P70G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-20V,ID =-70A RDS(ON) < 3mΩ @ VGS=-4.5V RDS(ON) < 4mΩ @ VGS=-2.5V RDS(ON) < 8mΩ @ VGS=-1.8V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Schematic diagram Pin Assignment Application - Load switch - Battery protection Package Marking and Ordering Information DFN5x6 -8L top view Device Marking NCE20P70G Device NCE20P70G Device Package DFN 5x6 -8L Reel Size - Tape width - Quantity -...