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NCE3035G - N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE3035G N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE3035G

Datasheet Details

Part number	NCE3035G
Manufacturer	NCE Power Semiconductor
File Size	333.82 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3035G Datasheet
Additional preview pages of the NCE3035G datasheet.

Product details

Description

The NCE3035G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =30V,ID =35A RDS(ON) < 7.0mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 2, 2018 |