NCE3035Q Datasheet PDF - NCE Power Semiconductor N-Channel Enhancement Mode Power MOSFET Specs

NCE3035Q - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE3035Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =30V,ID =35A RDS(ON) < 7.0mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

Datasheet Details

Part number	NCE3035Q
Manufacturer	NCE Power Semiconductor
File Size	319.25 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3035Q Datasheet
Additional preview pages of the NCE3035Q datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE3035Q NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =35A RDS(ON) < 7.0mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.

Published: Jun 2, 2018 |