Datasheet Details
| Part number | NCE3035K |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 356.89 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE3035K Datasheet
|
|
|
General Description
The NCE3035K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =30V,ID =35A RDS(ON) < 15mΩ @ VGS=10V.
- High density cell design for ultra low Rdson.
- Fully characterized Avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability Schematic diagram.