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NCE3035K - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The NCE3035K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =35A RDS(ON) < 15mΩ @ VGS=10V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet preview – NCE3035K

Datasheet Details

Part number NCE3035K
Manufacturer NCE Power Semiconductor
File Size 356.89 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3035K Datasheet
Additional preview pages of the NCE3035K datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE3035K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3035K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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