NCE30H10 - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =30V,ID =100A RDS(ON).

📥 Download Datasheet

NCE30H10 n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE30H10
Manufacturer	NCE Power Semiconductor
File Size	439.12 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30H10 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NCE30H21	N-Channel Enhancement Mode Power MOSFET	NCEPOWER
NCE3010S	N-Channel Enhancement Mode Power MOSFET	NCEPOWER
NCE3050K	N-Channel Enhancement Mode Power MOSFET	NCEPOWER
NCE3080K	N-Channel Enhancement Mode Power MOSFET	NCEPOWER
NCE30P50G	P-Channel Enhancement Mode Power MOSFET	NCEPOWER

Other Datasheets by NCE Power Semiconductor

Part Number	Description
NCE30H10G	N-Channel Enhancement Mode Power MOSFET
NCE30H10K	N-Channel Enhancement Mode Power MOSFET
NCE30H11BK	N-Channel Enhancement Mode Power MOSFET
NCE30H11G	N-Channel Enhancement Mode Power MOSFET
NCE30H12	N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

http://www.ncepower.com Pb Free Product NCE30H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =100A RDS(ON) <5.