NCE30H11BK Datasheet | NCE Power Semiconductor

Description The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V,ID =110A Schematic diagram RDS(ON) =3.2mΩ (typical) @ VGS=10V RDS(ON) =4.0mΩ (typical) @ VGS=4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application Only Use Marking and pin assignment - DC/DC converters - Synchronous Rectifier 100% UIS TESTED! times g TO-252-2L top view hen Package Marking and Ordering Information s Device Marking Device Device Package g NCE30H11BK TO-252-2L Reel Size Ø330mm Tape width 12mm Ton Absolute Maximum Ratings (TC=25℃unless otherwise noted) r Drain-Source Voltage Fo Gate-Source Voltage Parameter Symbol VDS VGS Limit 30 ±20 Quantity 2500 units Unit Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Derating...