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NCE30H11BK

Manufacturer: NCE Power Semiconductor

NCE30H11BK datasheet by NCE Power Semiconductor.

NCE30H11BK datasheet preview

NCE30H11BK Datasheet Details

Part number	NCE30H11BK
Datasheet	NCE30H11BK-NCEPowerSemiconductor.pdf
File Size	424.29 KB
Manufacturer	NCE Power Semiconductor
Description	N-Channel Enhancement Mode Power MOSFET

NCE30H11BK Overview

The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

NCE30H11BK Key Features

VDS =30V,ID =110A
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
DC/DC converters
Synchronous Rectifier

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NCE30H11BK Distributor