NCE30H11BK Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

Overview: http://.ncepower. NCE30H11BK NCE N-Channel Enhancement Mode Power.

Datasheet Details

Part number	NCE30H11BK
Manufacturer	NCE Power Semiconductor
File Size	424.29 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30H11BK-NCEPowerSemiconductor.pdf

The NCE30H11BK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

VDS =30V,ID =110A Schematic diagram RDS(ON) =3.2mΩ (typical) @ VGS=10V RDS(ON) =4.0mΩ (typical) @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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