NCE30H10G Datasheet | NCE Power Semiconductor

Description The NCE30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =30V,ID =100A RDS(ON) <2.5 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram Marking and pin assignment Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply DFN5X6-8L top view Package Marking and Ordering Information Device Marking NCE30H10G Device NCE30H10G Device Package DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID (100℃) IDM PD TJ,TSTG Limit 30 ±20 100 70.7 300 65 0.43 -55 To 175 Unit V V A A A W W/℃ ℃ Wuxi NCE Power Semiconductor Co.,...