• Part: NCE30H10G
  • Manufacturer: NCE Power Semiconductor
  • Size: 302.08 KB
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NCE30H10G Description

The NCE30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

NCE30H10G Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply
  • Tape width
  • Quantity