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NCE60H10F - N-Channel Enhancement Mode Power MOSFET

Description

The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ) Special process technology for high ESD capability

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Datasheet Details

Part number NCE60H10F
Manufacturer NCE Power Semiconductor
File Size 379.32 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60H10F Datasheet

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http://www.ncepower.com Pb Free Product NCE60H10F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature ● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.
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