NCE60H12
Description
The NCE60H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS = 60V,ID =115A RDS(ON) < 7.0mΩ @ VGS=10V (Typ6.5mΩ) - Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
