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NCE8010S - N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE8010S N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE8010S

Datasheet Details

Part number	NCE8010S
Manufacturer	NCE Power Semiconductor
File Size	403.34 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE8010S Datasheet
Additional preview pages of the NCE8010S datasheet.

Product details

Description

The NCE8010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 80V,ID =10A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) RDS(ON) < 20mΩ @ VGS=4.5V (Typ:14.8mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Jun 2, 2018 |