NCE8010S Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS = 80V,ID =10A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ) RDS(ON) < 20mΩ @ VGS=4.5V (Typ:14.8mΩ) - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Low gate to drain charge to reduce switching losses Schematic diagram Application - Power switching application - Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device...