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NCE8050AK - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE8050AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =80V,ID =50A RDS(ON) < 16mΩ @ VGS=10V (Typ:13mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability Schematic diagram.

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Datasheet Details

Part number NCE8050AK
Manufacturer NCE Power Semiconductor
File Size 376.90 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE8050AK Datasheet

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Full PDF Text Transcription (Reference)

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http://www.ncepower.com Pb Free Product NCE8050AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8050AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.