Part NCEAP40T11G
Description Automotive N-Channel Super Trench Power MOSFET
Category MOSFET
Manufacturer NCE Power Semiconductor
Size 663.87 KB
NCE Power Semiconductor

NCEAP40T11G Overview

Description

The NCEAP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =40V,ID =150A RDS(ON)=2.2mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • 100% ΔVds tested
  • AEC-Q101 qualified DFN 5X6 Top View Bottom View Package Marking and Device Device Package AP40T11G NCEAP40T11G DFN5X6-8L Reel Size