Datasheet Details
| Part number | NCEAP40T11G |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 663.87 KB |
| Description | Automotive N-Channel Super Trench Power MOSFET |
| Datasheet |
 NCEAP40T11G Datasheet
|
|
|
General Description
switching performance.
Qg.
Key Features
- VDS =40V,ID =150A RDS(ON)=2.2mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V.
- Excellent gate charge x RDS(on) product(FOM).
- Very low on-resistance RDS(on).
- 175 °C operating temperature.
- Pb-free lead plating.
- 100% UIS tested.
- 100% ΔVds tested.
- AEC-Q101 qualified DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package AP40T11G NCEAP40T11G DFN5X6-8L Reel Size - Tape w.