Part NCEAP40T13AGU
Description Automotive N-Channel Super Trench Power MOSFET
Category MOSFET
Manufacturer NCE Power Semiconductor
Size 527.80 KB
NCE Power Semiconductor

NCEAP40T13AGU Overview

Description

The NCEAP40T13AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =40V,ID =190A (Silicon Limited) RDS(ON)=1.8mΩ (typical) @ VGS=10V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • 100% ΔVds tested
  • AEC-Q101 qualified DFN 5X6 Top View Bottom View Package Marking and Device Device Package AP40T13AGU NCEAP40T13AGU DFN5X6-8L Reel Size