NCEAP40T13AGU Description
The NCEAP40T13AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
NCEAP40T13AGU Key Features
- VDS =40V,ID =190A (Silicon Limited) RDS(ON)=1.8mΩ (typical) @ VGS=10V
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 175 °C operating temperature
- Pb-free lead plating
- 100% UIS tested
- 100% ΔVds tested
- AEC-Q101 qualified
- Tape width
- Quantity