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NCEP015N30GU Datasheet

Manufacturer: NCE Power Semiconductor
NCEP015N30GU datasheet preview

Datasheet Details

Part number NCEP015N30GU
Datasheet NCEP015N30GU-NCEPowerSemiconductor.pdf
File Size 398.13 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Super Trench II Power MOSFET
NCEP015N30GU page 2 NCEP015N30GU page 3

NCEP015N30GU Overview

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of General.

NCEP015N30GU Key Features

  • VDS =30V,ID =170A RDS(ON)=1.3mΩ (typical) @ VGS=10V RDS(ON)=1.9mΩ (typical) @ VGS=4.5V
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating l 100% UIS TESTED! On100% ∆Vds TESTED!
  • Tape width
NCE Power Semiconductor logo - Manufacturer

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NCEP015N30GU Distributor

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