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NCEP015N30GU - N-Channel Super Trench II Power MOSFET

General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Key Features

  • VDS =30V,ID =170A RDS(ON)=1.3mΩ (typical) @ VGS=10V RDS(ON)=1.9mΩ (typical) @ VGS=4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

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Datasheet Details

Part number NCEP015N30GU
Manufacturer NCE Power Semiconductor
File Size 398.13 KB
Description N-Channel Super Trench II Power MOSFET
Datasheet download datasheet NCEP015N30GU Datasheet

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NCEP015N30GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of General Features ● VDS =30V,ID =170A RDS(ON)=1.3mΩ (typical) @ VGS=10V RDS(ON)=1.9mΩ (typical) @ VGS=4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.