NCEP015N30GU Datasheet | NCE Power Semiconductor

Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of General Features - VDS =30V,ID =170A RDS(ON)=1.3mΩ (typical) @ VGS=10V RDS(ON)=1.9mΩ (typical) @ VGS=4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 150 °C operating temperature y - Pb-free lead plating l 100% UIS TESTED! On100% ∆Vds TESTED! DFN 5X6 Use times Top View Bottom View Schematic Diagram eng Package Marking and Ordering Information h Device Marking Device Device Package gs P015N30GU DFN5X6-8L Reel Size - Tape width - Ton Absolute Maximum Ratings (TC=25℃unless otherwise noted) Quantity - r Drain-Source Voltage Fo Gate-Source Voltage Parameter Drain Current-Continuous Symbol VDS VGS ID Limit 30 ±20 170 Unit Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Derating...