NCEP068N10G Datasheet | NCE Power Semiconductor

Description General Features The NCEP068N10G uses Super Trench technology that is - VDS =100V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of - Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching - Very low on-resistance RDS(on) and synchronous rectification. - 150 °C operating temperature Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification - Pb-free lead plating ly 100% UIS TESTED! On100% ∆Vds TESTED! DFN 5X6 Use times Top View Bottom View Schematic Diagram eng Package Marking and Ordering Information h Device Marking Device Device Package gs P068N10G DFN5X6-8L Reel Size - Tape width - Ton Absolute Maximum Ratings (TC=25℃unless otherwise noted) Quantity - r Drain-Source Voltage Fo Gate-Source Voltage Parameter Drain Current-Continuous Symbol VDS VGS ID Limit 100 ±20 70 Unit Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Derating...