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NCEP068N10G - N-Channel Super Trench Power MOSFET

General Description

General

Key Features

  • The NCEP068N10G uses Super Trench technology that is.
  • VDS =100V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of.
  • Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching.
  • Very low on-resistance RDS(on) and synchronous rectification.
  • 150 °C.

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Datasheet Details

Part number NCEP068N10G
Manufacturer NCE Power Semiconductor
File Size 356.84 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP068N10G Datasheet

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http://www.ncepower.com NCEP068N10G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP068N10G uses Super Trench technology that is ● VDS =100V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3mΩ (typical) @ VGS=10V switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of ● Excellent gate charge x RDS(on) product(FOM) RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on) and synchronous rectification.