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NCEP25N10AK
NCE N-Channel Super Trench II Power MOSFET
Description
General Features
The NCEP25N10AK uses Super Trench II technology that is ● VDS =100V,ID =35A
uniquely optimized to provide the most efficient high frequency
RDS(ON)=21mΩ (typical) @ VGS=10V
switching performance. Both conduction and switching power
RDS(ON)=26mΩ (typical) @ VGS=4.5V
losses are minimized due to an extremely low combination of ● Excellent gate charge x RDS(on) product(FOM)
RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on)
and synchronous rectification.
NCEP25N10AK Datasheet
