Datasheet4U Logo Datasheet4U.com

NCEP40T11 - N-Channel Super Trench Power MOSFET

General Description

The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =40V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

📥 Download Datasheet

Datasheet Details

Part number NCEP40T11
Manufacturer NCE Power Semiconductor
File Size 343.25 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP40T11 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NCEP40T11G N-Channel MOSFET VBsemi
NCEP40T17A N-Channel MOSFET VBsemi
NCEP0135A N-Channel 100V MOSFET VBsemi
NCEP01T15 N-Channel 100V MOSFET VBsemi
NCEP01T30T N-Channel MOSFET VBsemi

Other Datasheets by NCE Power Semiconductor

Part Number Description
NCEP40T11AG N-Channel Power MOSFET
NCEP40T11AK N-Channel Super Trench Power MOSFET
NCEP40T11G N-Channel Power MOSFET
NCEP40T11K N-Channel Power MOSFET
NCEP40T12GU N-Channel Super Trench Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
http://www.ncepower.com NCEP40T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =40V,ID =110A RDS(ON)=2.3mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.