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NCEP40T17A - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.

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NCEP40T17A-VB NCEP40T17A-VB Datasheet N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0010 at VGS = 10 V 40 0.0012 at VGS = 4.5 V ID (A)a, c 280 250 Qg (Typ.) 240 nC TO-220AB FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • Synchronous Rectification • Power Supplies D www.VBsemi.com RoHS COMPLIANT G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.