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NCEP40T17AG - N-Channel Power MOSFET

General Description

The NCEP40T17AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =40V,ID =170A RDS(ON)=1.4mΩ (typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested Schematic Diagram DDDD DDDD.

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Datasheet Details

Part number NCEP40T17AG
Manufacturer NCE Power Semiconductor
File Size 337.05 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NCEP40T17AG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCEP40T17AG NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =40V,ID =170A RDS(ON)=1.