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NCEP40T11G

Manufacturer: NCE Power Semiconductor

NCEP40T11G datasheet by NCE Power Semiconductor.

NCEP40T11G datasheet preview

NCEP40T11G Datasheet Details

Part number NCEP40T11G
Datasheet NCEP40T11G-NCEPowerSemiconductor.pdf
File Size 378.65 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Power MOSFET
NCEP40T11G page 2 NCEP40T11G page 3

NCEP40T11G Overview

The NCEP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP40T11G Key Features

  • VDS =40V,ID =110A RDS(ON)=2.4mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous

NCEP40T11G from other manufacturers

View NCEP40T11G datasheet index

Brand Logo Part Number Description Other Manufacturers
VBsemi Logo NCEP40T11G N-Channel MOSFET VBsemi
NCE Power Semiconductor logo - Manufacturer

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NCEP40T11G Distributor

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