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NCEP40T12GU Datasheet N-channel Super Trench Power MOSFET

Manufacturer: NCE Power Semiconductor

Overview: http://.ncepower. NCEP40T12GU NCE N-Channel Super Trench Power.

General Description

The NCEP40T12GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

Key Features

  • VDS =40V,ID =120A RDS(ON)=2.05mΩ (typical) @ VGS=10V RDS(ON)=3.1mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating ly 100% UIS TESTED! On100% ∆Vds TESTED! DFN 5X6 Use times Top View Bottom View Schematic Diagram heng Package Marking and Ordering Information s Device Marking Device Device Package g P40T12GU NCEP40T12GU DFN5X6-8L Reel Size - Tape width -.

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